“Indium oxide contains oxygen-vacancy defects, which facilitate carrier scattering and thus lower device stability,” says ...

Quantum Science, a UK-based maker of infrared quantum dot (QD) materials, took centre stage at the UK's National Physical ...

Japan's National Institute of Information and Communications Technology (NICT) in collaboration with Sony Semiconductor has ...

After setting fundamental and harmonic impedance to power-added-efficiency matching conditions, Ohki and co-workers ...

Navitas Semiconductor has announced a partnership with BrightLoop supporting their latest series of hydrogen fuel-cell ...

Compound semiconductor firm WIN Semiconductors has launched a 0.12 μm gate-length D-mode GaN HEMT technology on SiC ...

TrendForce adds that while Renesas has reportedly decided to halt in-house production of SiC power chips, the company does ...

The project 'GENIE-RFIC: Generative ENgine for Intelligent and Expedited RFIC Design' will focus on GaN MMICs and CMOS RFICs.

Under the collaboration, Soitec will supply PSMC 300mm substrates incorporating a release layer, Transistor Layer Transfer ...

Swiss innovation centre CSEM, in collaboration with Dutch deep-tech startup QDI Systems, has developed what is claimed to be ...

Sumitomo Electric and Osaka Metropolitan University have successfully fabricated a GaN-HEMT on a 2-inch polycrystalline ...

According to a study published in Advanced Functional Materials, the refined technique can bypass the high-temperature ...